advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 30v low gate charge r ds(on) 25m fast switching i d 28a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =100 a i dm a p d @t a =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 4 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 31.25 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.25 continuous drain current, v gs @ 10v 24 pulsed drain current 1 95 gate-source voltage 25 continuous drain current, v gs @ 10v 28 parameter rating drain-source voltage 30 200331052-1/4 ap40t03gh/j pb free plating product g d s to-252(h) g d s to-251(j) g d s the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap40t03gj) are available for low-profile applications.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.032 -v/ r ds(on) static drain-source on-resistance v gs =10v, i d =18a - - 25 m v gs =4.5v, i d =14a - - 45 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =18a - 15 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 25v - - 100 na q g total gate charge 2 i d =18a - 8.8 - nc q gs gate-source charge v ds =20v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 5.8 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =18a - 62 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 16 - ns t f fall time r d =0.83 - 4.4 - ns c iss input capacitance v gs =0v - 655 - pf c oss output capacitance v ds =25v - 145 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =1.3v - - 28 a i sm pulsed source current ( body diode ) 1 --95 a v sd forward on voltage 2 t j =25 , i s =28a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. 2/4 ap40t03gh/j
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 ap40t03gh/j 0 25 50 75 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8 .0v 6 .0v v g =4.0v 0 30 60 90 0.0 1.0 2.0 3.0 4.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8 .0v 6 .0v v g =4.0v 0.2 0.8 1.4 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =18a v g =10v 10 30 50 70 0 5 10 15 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =14a t c =25 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4/4 ap40t03gh/j 1 10 100 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 3 6 9 12 036912 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =18a v ds =10v v ds =15v v ds =20v 10 100 1000 1 8 15 22 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge
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